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| SMD Type PNP Silicon Epitaxia 2SA1608 Transistors IC Features High fT: fT=400MHz. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -40 -5 -500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350is,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -40V, IE=0 VEB = -4V, IC=0 VCE = -2V , IC = -150mA 75 140 Min Typ Max -100 -100 300 V V MHz 8 pF ns ns ns Unit nA nA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA fT Cob ton tstg toff VCE = -10V , IE = 20mA VCB = -10V , IE = 0 , f = 1.0MHz VCC = -30V , IC = 150mA , IB1 = -IB2 = 15mA 150 -0.45 -0.75 -1 400 5 25 70 100 -1.3 hFE Classification Marking hFE Y12 75 150 Y13 100 200 Y14 150 300 www.kexin.com.cn 1 |
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